Datasheet VS-HOT200C080 (Vishay) - 5
| Fabricante | Vishay |
| Descripción | FlatPAK HC0 Transfer Mold Power Module Half Bridge - Power MOSFET, 200 A in FlatPAK HC0 package |
| Páginas / Página | 12 / 5 — VS-HOT200C080 |
| Formato / tamaño de archivo | PDF / 203 Kb |
| Idioma del documento | Inglés |
VS-HOT200C080
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VS-HOT200C080
www.vishay.com Vishay Semiconductors Axis Title Axis Title 500 10000 1.2 10000 V = 15 V Top V = V 450 GS GS DS V = 13 V 1.1 GS 400 V = 10 V GS V = 9 V GS reshold 1 350 V = 8 V h GS 1000 T V = 7 V Bottom 1000 GS 0.9 300 e ine ) V = 6 V GS ne ne g I = 250 μA ne (A D 250 d Gate a 0.8 e lt I D 1st li 2nd l 2nd li liz 1st li 200 a Vo 0.7 V = 5 V 100 100 150 GS orm N - 0.6 100 H) (T 0.5 50 GSV 0 10 ine 0.4 10 0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 175 nd l V (V) DS T (°C) J Fig. 7 - Typical Drain to Source Current Output Characteristics Fig. 10 - Normalized Gate Threshold Voltage vs. Temperature at TJ = 175 °C Axis Title Axis Title 1.8 10000 4.0 10000 Ω) I = 200 A D T = -40 °C J (m 1.6 3.5 1.4 tance s T = 25 °C T = 175 °C 3.0 J 1.2 J 1000 esi 1000 ) 1 2.5 ne ne ine (V ne ne ine th 0.8 1st li 2nd li 2nd l GS 2.0 1st li 2nd li V T = 125 °C 2nd l ource On-R J 0.6 100 100 T = 150 °C 1.5 J 0.4 T = 25 °C T = 175 °C J rain-to-S J D 1.0 - 0.2 ) n 0 10 0.5 10 DS(oR 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1 2 3 4 5 6 7 8 V (V) I (mA) GS D Fig. 8 - Typical Drain-to-Source On-Resistance vs. Fig. 11 - Typical Gate Threshold Voltage Characteristics Gate to Source Voltage Axis Title Axis Title 2.2 10000 1 10000 V = 10 V GS 2 T = 175 °C J 0.1 1.8 ource 1000 1000 1.6 T = 150 °C J e ) 0.01 I = 200 A A D ne 1.4 lin rain-to-S (m T = 125 °C tance J 1st 1st li d D s I DSS e 1.2 0.001 100 liz 100 a 2nd 1 On-Resi orm T = 25 °C 0.0001 J N - 0.8 (on) S D 0.6 10 R 0.00001 10 -50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 ine T (°C) V (V) nd l J DSS Fig. 9 - Normalized Drain-to-Source On-Resistance vs. Fig. 12 - Typical Zero Gate Voltage Drain Current Temperature Revision: 27-Jan-2026
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Document Number: 97360 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors Axis Title Axis Title 500 10000 1.2 10000 V = 15 V Top V = V 450 GS GS DS V = 13 V 1.1 GS 400 V = 10 V GS V = 9 V GS reshold 1 350 V = 8 V h GS 1000 T V = 7 V Bottom 1000 GS 0.9 300 e ine ) V = 6 V GS ne ne g I = 250 μA ne (A D 250 d Gate a 0.8 e lt I D 1st li 2nd l 2nd li liz 1st li 200 a Vo 0.7 V = 5 V 100 100 150 GS orm N - 0.6 100 H) (T 0.5 50 GSV 0 10 ine 0.4 10 0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 175 nd l V (V) DS T (°C) J Fig. 7 - Typical Drain to Source Current Output Characteristics Fig. 10 - Normalized Gate Threshold Voltage vs. Temperature at TJ = 175 °C Axis Title Axis Title 1.8 10000 4.0 10000 Ω) I = 200 A D T = -40 °C J (m 1.6 3.5 1.4 tance s T = 25 °C T = 175 °C 3.0 J 1.2 J 1000 esi 1000 ) 1 2.5 ne ne ine (V ne ne ine th 0.8 1st li 2nd li 2nd l GS 2.0 1st li 2nd li V T = 125 °C 2nd l ource On-R J 0.6 100 100 T = 150 °C 1.5 J 0.4 T = 25 °C T = 175 °C J rain-to-S J D 1.0 - 0.2 ) n 0 10 0.5 10 DS(oR 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1 2 3 4 5 6 7 8 V (V) I (mA) GS D Fig. 8 - Typical Drain-to-Source On-Resistance vs. Fig. 11 - Typical Gate Threshold Voltage Characteristics Gate to Source Voltage Axis Title Axis Title 2.2 10000 1 10000 V = 10 V GS 2 T = 175 °C J 0.1 1.8 ource 1000 1000 1.6 T = 150 °C J e ) 0.01 I = 200 A A D ne 1.4 lin rain-to-S (m T = 125 °C tance J 1st 1st li d D s I DSS e 1.2 0.001 100 liz 100 a 2nd 1 On-Resi orm T = 25 °C 0.0001 J N - 0.8 (on) S D 0.6 10 R 0.00001 10 -50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 ine T (°C) V (V) nd l J DSS Fig. 9 - Normalized Drain-to-Source On-Resistance vs. Fig. 12 - Typical Zero Gate Voltage Drain Current Temperature Revision: 27-Jan-2026
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Document Number: 97360 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000