Datasheet VS-HOT200C080 (Vishay) - 9
| Fabricante | Vishay |
| Descripción | FlatPAK HC0 Transfer Mold Power Module Half Bridge - Power MOSFET, 200 A in FlatPAK HC0 package |
| Páginas / Página | 12 / 9 — VS-HOT200C080. ORDERING INFORMATION TABLE. Device code. VS-. 200. 080. … |
| Formato / tamaño de archivo | PDF / 203 Kb |
| Idioma del documento | Inglés |
VS-HOT200C080. ORDERING INFORMATION TABLE. Device code. VS-. 200. 080. CIRCUIT CONFIGURATION. CIRCUIT. CIRCUIT DRAWING
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VS-HOT200C080
www.vishay.com Vishay Semiconductors Axis Title Axis Title 1800 10000 400 10000 I = 250 A I = 250 A 1600 D D 350 1400 ) t at 25 °C 300 s t at 25 °C 1200 d(off) 1000 d(on) 1000 (ns) (n e t at 125 °C d(on) im 1000 250 ine ne ne ine me ne ne Ti n 800 2nd l t at 125 °C d(off) 1st li 2nd li 2nd l 200 1st li 2nd li -O rn-Off T rn u 600 100 100 T Tu 150 t at 125 °C 400 r t at 125 °C f t at 25 °C 100 r 200 t at 25 °C f 0 10 50 10 60 70 80 90 100 110 120 130 140 40 50 60 70 80 90 100 110 R (Ω) R (Ω) g g Fig. 27 - Typical Turn-Off Switching Time vs. Rg Fig. 28 - Typical Turn-On Switching Time vs. Rg VDD = 52 V, VGS = 0 V / 13 V VDD = 52 V, VGS = 0 V / 13 V
ORDERING INFORMATION TABLE Device code VS- HO T 200 C 080
1 2 3 4 5 6
1
- Vishay Semiconductors product
2
- Package indicator (HO = FlatPAK HC0)
3
- Circuit configuration (T = half bridge)
4
- Current rating (200 = 200 A)
5
- Switch die technology (C = PowerMOS)
6
- Voltage rating (080 = 80 V)
CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CIRCUIT DRAWING CONFIGURATION CODE
D1 DC+ Q1 R+ R- G1 Half bridge T S1 POUT Q2 C T2 Ntc G2 T1 S2 GND Revision: 27-Jan-2026
9
Document Number: 97360 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors Axis Title Axis Title 1800 10000 400 10000 I = 250 A I = 250 A 1600 D D 350 1400 ) t at 25 °C 300 s t at 25 °C 1200 d(off) 1000 d(on) 1000 (ns) (n e t at 125 °C d(on) im 1000 250 ine ne ne ine me ne ne Ti n 800 2nd l t at 125 °C d(off) 1st li 2nd li 2nd l 200 1st li 2nd li -O rn-Off T rn u 600 100 100 T Tu 150 t at 125 °C 400 r t at 125 °C f t at 25 °C 100 r 200 t at 25 °C f 0 10 50 10 60 70 80 90 100 110 120 130 140 40 50 60 70 80 90 100 110 R (Ω) R (Ω) g g Fig. 27 - Typical Turn-Off Switching Time vs. Rg Fig. 28 - Typical Turn-On Switching Time vs. Rg VDD = 52 V, VGS = 0 V / 13 V VDD = 52 V, VGS = 0 V / 13 V
ORDERING INFORMATION TABLE Device code VS- HO T 200 C 080
1 2 3 4 5 6
1
- Vishay Semiconductors product
2
- Package indicator (HO = FlatPAK HC0)
3
- Circuit configuration (T = half bridge)
4
- Current rating (200 = 200 A)
5
- Switch die technology (C = PowerMOS)
6
- Voltage rating (080 = 80 V)
CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CIRCUIT DRAWING CONFIGURATION CODE
D1 DC+ Q1 R+ R- G1 Half bridge T S1 POUT Q2 C T2 Ntc G2 T1 S2 GND Revision: 27-Jan-2026
9
Document Number: 97360 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000