Datasheet IRFL024N (Infineon) - 4
| Fabricante | Infineon |
| Descripción | 55V Single N-Channel IR MOSFET in SOT-223 package |
| Páginas / Página | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 146 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRFL024NPbF 700 20 VGS = 0V, f = 1MHz ID = 1.68 A C = C + C C SHORTED iss gs gd , ds V = 44V DS 600 C = C rss gd V = 27V DS C = C + C oss ds gd Ciss 15 500 400 Coss tance (pF) 10 300 te-to-Source Voltage (V) C, Capaci a 200 Crss 5 GS 100 V , G FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 100 0 5 10 15 20 V , Drain-to-Source Voltage (V) DS Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 10 100us 1ms 1 1 10ms I , Drain Current (A) D T = 150 C ° J I , Reverse Drain Current (A) SD T = 25 C ° J T = 25 C ° C T = 150 C ° J V = 0 V GS Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 V ,Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 10 100us 1ms 1 1 10ms I , Drain Current (A) D T = 150 C ° J I , Reverse Drain Current (A) SD T = 25 C ° J T = 25 C ° C T = 150 C ° J V = 0 V GS Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 V ,Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com