Datasheet IRFL024N (Infineon) - 5
| Fabricante | Infineon |
| Descripción | 55V Single N-Channel IR MOSFET in SOT-223 package |
| Páginas / Página | 9 / 5 — Fig 9a. Fig 10a. Fig 9b. Fig 10b. Fig 11 |
| Formato / tamaño de archivo | PDF / 146 Kb |
| Idioma del documento | Inglés |
Fig 9a. Fig 10a. Fig 9b. Fig 10b. Fig 11
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IRFL024NPbF RD Q V G DS 10V VGS Q D.U.T. GS QGD RG + - VDD VG 10V Pulse Width ≤ 1 µs Charge Duty Factor ≤ 0.1 %
Fig 9a.
Basic Gate Charge Waveform
Fig 10a.
Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 50KΩ 90% .2µF 12V .3µF +V D.U.T. DS - 10% VGS VGS 3mA td(on) tr td(off) tf I I G D Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
Fig 10b.
Switching Time Waveforms 1000 100 ) thJC D = 0.50 (Z 0.20 0.10 10 sponse e 0.05 PDM l R a 0.02 m 0.01 t1 1 t2 Ther SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ = P DM x ZthJC + TC 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
Fig 9a.
Basic Gate Charge Waveform
Fig 10a.
Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 50KΩ 90% .2µF 12V .3µF +V D.U.T. DS - 10% VGS VGS 3mA td(on) tr td(off) tf I I G D Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
Fig 10b.
Switching Time Waveforms 1000 100 ) thJC D = 0.50 (Z 0.20 0.10 10 sponse e 0.05 PDM l R a 0.02 m 0.01 t1 1 t2 Ther SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ = P DM x ZthJC + TC 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5