Datasheet JX3S0040090M (JX Semiconductor) - 6

JX3S0040090M Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext)
700 450
VGS=-5/+20 V VDS =600 V
600
VDS = 600V
400
IDS = 30A L=100uH VGS =-5/+2 0 V RG(ext)=2.5Ω
350 500
L = 10 0 μ H
300 Etotal 400 250 Eon 300 200 150 200 100 100 Eoff 50 0 0 0 10 20 30 40
Drain to Source Current, I
0 5 10 15 20 25
DS (A) External Gate Resistor RG(ext) (Ohms) Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext)
300 80
VDS = 600 V IDS =3 0A VDS =600 V IDS =30A V 0 V
E 250
GS = -5/+2
total 70
L = 20 V 100 μH VGS =-5/+ L = 100 μ H
tr Eon 60 200 tdoff 50 150 40 100 30 tf 20 tdon 50 Eoff 10 0 0 0 20 40 60 80 100 120 140 160 180
Junction Temperature, TJ ( C)
0 5 10 15 20 25
External Gate Resistor RG(ext) (Ohms) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
1 100 0.5 1us 0.3 0.1 10 10uS 0.1 100uS 0.05 0.02 1 1ms 0.01 0.01 100ms Single P luse 0.1 0.0011.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0.01
Time, tp (s)
0.1 1 10 100 1000
Drain- Source Voltage, VDS (V)
6 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area