Datasheet JX3S0750170M (JX Semiconductor)
| Fabricante | JX Semiconductor |
| Descripción | 1700V SiC N-Channel MOSFET in TO-247 package |
| Páginas / Página | 8 / 1 — JX3S0750170M. 1700V N-Channel MOSFET. Description. Features. Application. … |
| Formato / tamaño de archivo | PDF / 631 Kb |
| Idioma del documento | Inglés |
JX3S0750170M. 1700V N-Channel MOSFET. Description. Features. Application. Ordering Information
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JX3S0750170M 1700V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, fJXer operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances JX Semi with 12V Gate Drive Lower QG and Device Capacitances(Coss,Crss) Body Diode with Low VF and Low QRR FJXer and More Efficient Switching ROHS Compliant, Halogen free
Application
Solar String Inveter and Central Inverter UPS Switch Mode Power Supplies Power Factor Correction Modules Battery Charging Auxiliary Power Supply High Voltage Coverter
Ordering Information
Part Number Marking Package Packaging JX3S0750170M ASC5N1700MT3 TO-247 Tube 1 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, fJXer operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances JX Semi with 12V Gate Drive Lower QG and Device Capacitances(Coss,Crss) Body Diode with Low VF and Low QRR FJXer and More Efficient Switching ROHS Compliant, Halogen free
Application
Solar String Inveter and Central Inverter UPS Switch Mode Power Supplies Power Factor Correction Modules Battery Charging Auxiliary Power Supply High Voltage Coverter
Ordering Information
Part Number Marking Package Packaging JX3S0750170M ASC5N1700MT3 TO-247 Tube 1 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area