Datasheet JX3S0750170M (JX Semiconductor) - 2
| Fabricante | JX Semiconductor |
| Descripción | 1700V SiC N-Channel MOSFET in TO-247 package |
| Páginas / Página | 8 / 2 — JX3S0750170M. Absolute Maximum Ratings(Tc=25. Symbol Parameter. Value. … |
| Formato / tamaño de archivo | PDF / 631 Kb |
| Idioma del documento | Inglés |
JX3S0750170M. Absolute Maximum Ratings(Tc=25. Symbol Parameter. Value. Unit. Electrical Characteristics(TJ = 25
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JX3S0750170M Absolute Maximum Ratings(Tc=25
℃
) Symbol Parameter Value Unit
VDS Drain-Source Voltage 1700 V ID Drain Current(continuous)at Tc=25℃ 5 A ID Drain Current(continuous)at Tc=100℃ 3 A IDM Drain Current (pulsed) 10 A VGS Gate-Source Voltage -8/+19 V PD Power Dissipation TC = 25°C 60 W TJ, Tstg Junction and Storage Temperature Range -55 to +175 ℃
Electrical Characteristics(TJ = 25
℃
unless otherwise specified) Typical Performance-Static Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDS Drain-source Breakdown Voltage ID=100uA,VGS=0V 1700 V VDS =1700V, IDSS Zero Gate Voltage Drain Current 100 uA VGS =0V, TJ=25OC VDS =0V ; VGS =-8 to IGSS Gate-body Leakage Current 19V 100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=1mA 1.5 2 3 V VGSon Recommended turn-on Voltage 12 V Static VGSoff Recommended turn-of Voltage -3 V VGS=12V, ID=2A 750 1000 mΩ RDS(on) Static Drain-source On Resistance VGS=12V, ID=2A T 1350 mΩ J=175℃ 2 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
℃
) Symbol Parameter Value Unit
VDS Drain-Source Voltage 1700 V ID Drain Current(continuous)at Tc=25℃ 5 A ID Drain Current(continuous)at Tc=100℃ 3 A IDM Drain Current (pulsed) 10 A VGS Gate-Source Voltage -8/+19 V PD Power Dissipation TC = 25°C 60 W TJ, Tstg Junction and Storage Temperature Range -55 to +175 ℃
Electrical Characteristics(TJ = 25
℃
unless otherwise specified) Typical Performance-Static Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDS Drain-source Breakdown Voltage ID=100uA,VGS=0V 1700 V VDS =1700V, IDSS Zero Gate Voltage Drain Current 100 uA VGS =0V, TJ=25OC VDS =0V ; VGS =-8 to IGSS Gate-body Leakage Current 19V 100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=1mA 1.5 2 3 V VGSon Recommended turn-on Voltage 12 V Static VGSoff Recommended turn-of Voltage -3 V VGS=12V, ID=2A 750 1000 mΩ RDS(on) Static Drain-source On Resistance VGS=12V, ID=2A T 1350 mΩ J=175℃ 2 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area