Datasheet JX3S0750170M (JX Semiconductor) - 3

JX3S0750170M Typical Performance-Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance 200 pF VDS=1000V,f=1MHZ,VGS=0V Coss Output Capacitance 6 pF VAC=25mV Crss Reverse Transfer Capacitance 1 pF gfs Transconductance VDS=10V , ID=2A 1 S EOSS COSS Stored Energy VDS=1000V,f=1MHZ 3 μJ EON Turn-On Energy（Body Diode） VDS=1200V,VGS=-3/12V， 64 μJ ID=2A，L=1mH TJ=175℃ EOFF Turn-Off Energy（Body Diode） Rext=25Ω 15 μJ Qg Total Gate Charge 8 nC VDS=1200V, VGS=-3V/12V, Qgs Gate-source Charge I 1.5 nC D = 2A Qgd Gate-Drain Charge 3 nC td(on) Turn-on Delay Time VDS=1200V,VGS=-3V/12V, 10 ns tr Rise Time ID =2A, L=1mH 7 ns td(off) Turn-of Delay Time Rext=25Ω 8 ns tf Fal Time 6 ns
Typical Performance-Reverse Diode(TJ = 25
℃
unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V,IF=1A,TJ=25OC 3.5 6 V VFSD Forward Voltage VGS=0V,IF=1A,TJ=175OC 3 6 V Is Continuous Diode Forward Current VGS=0V，TC=25OC 5 A
Thermal Characteristics
Symbol Parameter Value. Unit RθJC Thermal Resistance, Junction-to-Case 2.5 OC/W RθJA Thermal Resistance, Junction-to-Ambient 40 OC/W The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=175℃ 3 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area