Datasheet JX3S0080120M (JX Semiconductor)
| Fabricante | JX Semiconductor |
| Descripción | 1200V N-Channel MOSFET in TO-247 package |
| Páginas / Página | 7 / 1 — JX3S0080120M. 1200V N-Channel MOSFET. Description. Features. Application. … |
| Formato / tamaño de archivo | PDF / 689 Kb |
| Idioma del documento | Inglés |
JX3S0080120M. 1200V N-Channel MOSFET. Description. Features. Application. Ordering Information
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JX3S0080120M 1200V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to paral el and simple to drive ROHS Compliant, Halogen free
Application
EV Charging High Voltage DC/DC Converters Switch Mode Power Supplies Power Factor Correction Modules
Ordering Information
Part Number Marking Package Packaging JX3S0080120M JX3S0080120M TO-247 Tube 1 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to paral el and simple to drive ROHS Compliant, Halogen free
Application
EV Charging High Voltage DC/DC Converters Switch Mode Power Supplies Power Factor Correction Modules
Ordering Information
Part Number Marking Package Packaging JX3S0080120M JX3S0080120M TO-247 Tube 1 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area