Datasheet JX3S0080120M (JX Semiconductor) - 4

JX3S0080120M Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C)
80 60 70 VGS=20V VGS=20V V 50 GS=18V 60 VGS=18 V 50 40 VGS=16V VGS=16 V 40 30 VGS=12V 30 VGS=12V 20 VGS= 8 V 20 10 VGS=8V 10 0 0 0 2 4 6 8 10
Drain-Source Voltage, V
0 2 4 6 8 10
DS (V) Drain- Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
2 200 1.8 180 1.6 160 1.4 140 1.2 VGS=15V 120 1 100 0.8 VGS=18V 80 VGS=20V 0.6 60 0.4 40 0.2 20 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ( C) Junction Temperature, TJ( C) Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 C
80 -9 -7 -5 -3 -1 1 0 70 -10 60 VGS=-4V VGS=0V -20 50 TJ=150 -30 40 ℃ V -40 GS=-2V 30 TJ=25℃ -50 20 TJ=-40℃ -60 10 -70 0 -80 0 2 4 6 8 10 12
Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V)
4 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area