Datasheet ON Semiconductor FDN360P-NBGT003B — Ficha de datos

DATA SHEET
www.onsemi.com MOSFET – Single, P-Channel,
POWERTRENCH)
FDN360P SOT−23
CASE 527AG General Description This P−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored
to minimize the on−state resistance and yet maintain low gate charge
for superior switching performance.
These devices are well suited for low voltage and battery powered
applications where low in−line power loss and fast switching are
required. D G Features MARKING DIAGRAM • −2 A, −30 V RDS(ON) = 80 mW @ VGS = −10 V
RDS(ON) = 125 mW @ VGS = −4.5 V
Low Gate Charge (6.2 nC Typical)
High Performance Trench Technology for Extremely Low RDS(ON)
High Power Version of Industry Standard SOT−23 Package. Identical
Pin−Out to SOT−23 with 30% Higher Power Handling Capability
These Devices are Pb−Free and are RoHS Compliant
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• 360MG
G ♦ ABSOLUTE MAXIMUM RATINGS
Parameter Ratings Unit VDSS Drain−Source Voltage −30 V VGSS Gate−Source Voltage ±20 V ID Drain Current …