Datasheet NTD6600N (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET100 V, 12 A, N−Channel, Logic Level DPAK |
| Páginas / Página | 7 / 2 — 100 V, 12 A, N−Channel, Logic Level DPAK. Features. http://onsemi.com. … |
| Revisión | 4 |
| Formato / tamaño de archivo | PDF / 123 Kb |
| Idioma del documento | Inglés |
100 V, 12 A, N−Channel, Logic Level DPAK. Features. http://onsemi.com. (BR)DSS. DS(on) TYP. ID MAX. Typical Applications. N−Channel
Línea de modelo para esta hoja de datos
Versión de texto del documento
link to page 2 link to page 2 link to page 2 link to page 2 link to page 2 link to page 3 NTD6600N Power MOSFET
100 V, 12 A, N−Channel, Logic Level DPAK Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
http://onsemi.com
• Avalanche Energy Specified •
V R (BR)DSS DS(on) TYP ID MAX
Logic Level • 100 V 118 mW @ 5.0 V 12 A Pb−Free Packages are Available
Typical Applications N−Channel
• PWM Motor Controls D • Power Supplies • Converters
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) G
Rating Symbol Value Unit
S Drain−to−Source Voltage VDSS 100 Vdc Drain−to−Source Voltage (RGS = 1.0 MW) VDGR 100 Vdc
MARKING
Gate−to−Source Voltage
DIAGRAMS
− Continuous VGS ± 20 Vdc 4 Drain Current − Continuous @ TA = 25°C ID 12 Adc Drain Drain Current − Continuous @ TA =100°C ID 9.0 Drain Current − Pulsed (Note 3) I 4
DPAK
DM 44 Apk
CASE 369C
Total Power Dissipation PD 56.6 W
(Surface Mounted)
Derate above 25°C 1 2 0.38 W/°C
STYLE 2
YWW NT 6600G Total Power Dissipation @ T 3 A = 25°C (Note 1) 1.76 W Total Power Dissipation @ TA = 25°C (Note 2) 1.28 W 2 1 3 Drain Operating and Storage Temperature Range TJ, Tstg −55 to °C Gate Source +175 4 Single Pulse Drain−to−Source Avalanche EAS 72 mJ Energy − Starting T Drain J = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, 4 I
DPAK−3
L = 12 Apk, L = 1.0 mH, RG = 25 W)
CASE 369D
Thermal Resistance °C/W
(Straight Lead)
− Junction−to−Case R YWW NT 6600G qJC 2.65
STYLE 2
− Junction−to−Ambient (Note 1) RqJA 85 − Junction−to−Ambient (Note 2) 1 RqJA 117 2 3 Maximum Temperature for Soldering TL 260 °C 1 2 3 Purposes, (1/8″ from case for 10 s) Gate Drain Source Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Y = Year Recommended Operating Conditions may affect device reliability. WW = Work Week 1. When surface mounted to an FR4 board using 0.5 sq in pad size. NT6600 = Device Code 2. When surface mounted to an FR4 board using the minimum recommended G = Pb−Free Package pad size. 3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 4 NTD6600N/D
100 V, 12 A, N−Channel, Logic Level DPAK Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
http://onsemi.com
• Avalanche Energy Specified •
V R (BR)DSS DS(on) TYP ID MAX
Logic Level • 100 V 118 mW @ 5.0 V 12 A Pb−Free Packages are Available
Typical Applications N−Channel
• PWM Motor Controls D • Power Supplies • Converters
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) G
Rating Symbol Value Unit
S Drain−to−Source Voltage VDSS 100 Vdc Drain−to−Source Voltage (RGS = 1.0 MW) VDGR 100 Vdc
MARKING
Gate−to−Source Voltage
DIAGRAMS
− Continuous VGS ± 20 Vdc 4 Drain Current − Continuous @ TA = 25°C ID 12 Adc Drain Drain Current − Continuous @ TA =100°C ID 9.0 Drain Current − Pulsed (Note 3) I 4
DPAK
DM 44 Apk
CASE 369C
Total Power Dissipation PD 56.6 W
(Surface Mounted)
Derate above 25°C 1 2 0.38 W/°C
STYLE 2
YWW NT 6600G Total Power Dissipation @ T 3 A = 25°C (Note 1) 1.76 W Total Power Dissipation @ TA = 25°C (Note 2) 1.28 W 2 1 3 Drain Operating and Storage Temperature Range TJ, Tstg −55 to °C Gate Source +175 4 Single Pulse Drain−to−Source Avalanche EAS 72 mJ Energy − Starting T Drain J = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, 4 I
DPAK−3
L = 12 Apk, L = 1.0 mH, RG = 25 W)
CASE 369D
Thermal Resistance °C/W
(Straight Lead)
− Junction−to−Case R YWW NT 6600G qJC 2.65
STYLE 2
− Junction−to−Ambient (Note 1) RqJA 85 − Junction−to−Ambient (Note 2) 1 RqJA 117 2 3 Maximum Temperature for Soldering TL 260 °C 1 2 3 Purposes, (1/8″ from case for 10 s) Gate Drain Source Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Y = Year Recommended Operating Conditions may affect device reliability. WW = Work Week 1. When surface mounted to an FR4 board using 0.5 sq in pad size. NT6600 = Device Code 2. When surface mounted to an FR4 board using the minimum recommended G = Pb−Free Package pad size. 3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 4 NTD6600N/D