Datasheet NV6257 (Navitas Semiconductor) - 2

TARGET
NV6257 Absolute Maximum Ratings (with respect to P unless noted) GND SYMBOL PARAMETER MAX UNITS
V HV input 0 to +650 V IN V Switch Node -7 to +657 V SW IOUTL @ TC=100ºC Continuous output Current (Low-side FET) 8 A IOUTL PULSE@ TC=25ºC Pulsed output Current (Low-side FET) 14 A IOUTH @ TC=100ºC Continuous output Current (High-side FET) 5 A IOUTH PULSE@ TC=25ºC Pulsed output Current (High-side FET) 9 A V (to V ) High-side gate driver bootstrap rail 30 V B SW V (to V ) High-side drive supply 7.2 V DDH SW DZ (to V ) High-side voltage regulator setting input 6.6 V H SW V Low-side drive supply 7.2 V DDL DZ Low-side voltage regulator setting input 6.6 V L EN Enable input 30 V IN , IN High-/Low-side drive input 30 V H L V Supply voltage 30 V CC dV/dt Slew Rate 200 V/ns TJ Operating Junction Temperature -55 to 150 ºC TSTOR Storage Temperature -55 to 150 ºC (1) Absolute maximum ratings are stress ratings; devices subjected to stresses beyond absolute maximum ratings may cause permanent damage. Exposure to absolute maximum ratings for extended periods may affect device reliability.
Recommended Operating Conditions SYMBOL PARAMETER MIN TYP MAX UNITS
V Supply voltage 10 15 24 V CC V High-/low-side drive input voltage 0 5 V INH,L CC V DZL Low-side drive set Zener voltage 5.8 6.2 (2) 6.6 V DZH High-side drive set Zener voltage 5.8 6.2 (2) 6.6 V (2) Use of Zener diode other than 6.2 V is not recommended. See Table III for required 6.2 V Zener diode part numbers. Revised 8-1-18 Navitas Semiconductor Confidential Page 2