Datasheet VS-HOT200C080 (Vishay) - 7

VS-HOT200C080
www.vishay.com Vishay Semiconductors Axis Title 10 000 10000 V = 10 V, GS R = 0.77 C°/W, thJC R max. = 3.3 mΩ, DS(on) T = 175 °C, J T = 25 °C ) A 1000 (A ne rrent line u 1000 C 1st li 2nd eak 100 P 100 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t - Rectangular Pulse Duration (s) 1 Fig. 18 - Peak Current Capability Axis Title 100 000 10000 V = 10 V, GS R = 0.77 C°/W, thJC R max. = 3.3 mΩ, DS(on) T = 175 °, 10 000 J (W T = 25 °C r A e 1000 w o P ne line 1000 1st li 2nd ransient 100 T ak 100 e P 10 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t - Rectangular Pulse Duration (s) 1 Fig. 19 - Peak Power Capability Axis Title 1 10000 ) 0.1 1000 0.50 pedance (°C/W 0.20 m I 0.10 ne ne al Case 0.05 0.02 1st li 2nd li herm 0.01 T 0.01 100 - DC C thJ Junction to Z 0.001 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t - Rectangular Pulse Duration (s) 1 Fig. 20 - Maximum Thermal Impedance ZthJC Characteristics Revision: 27-Jan-2026
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